Advanced Power Technology APT APT6030BVFR Datasheet

APT6030BVFR

600V 21A 0.300W

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement

FREDFET

TO-247

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

D

• Lower Leakage • Popular TO-247 Package

G

• Faster Switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT6030BVFR

600

21

84
±30
±40
300

2.4

-55 to 150
300

21
30

1300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

PRELIMINARY

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

600

21

24

1000
±100

0.30
250

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5944 Rev - 1- 2000

DYNAMIC CHARACTERISTICS APT6030BVFR

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

V

= 10V

GS

= 0.5 V

V

DD

ID = I

[Cont.] @ 25°C

D

V

= 15V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

R

= 1.6W

G

DSS

DSS

MIN TYP MAX

3750 4500

430 600
160 240
150 225

18 27
60 90
12 24
10 20
47 75

816

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

(VGS = 0V, IS = -ID [Cont.])

5

Reverse Recovery Charge

Q

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

I

RRM

(IS = -ID [Cont.], di/dt = 100A/µs)

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

Characteristic

Junction to Case
Junction to Ambient

qJA

PRELIMINARY

T

= 25°C 205 250

j

T

= 125°C 415 525

j

T

= 25°C 1.5

j

T

= 125°C 5.5

j

T

= 25°C 13

j

T

= 125°C 23

j

3

See MIL-STD-750 Method 3471

4

Starting T

5

IS £ ID [Cont.],

+25°C, L = 5.90mH, R

j

=

di

/

= 100A/µs, T

dt

MIN TYP MAX

21
84

1.3

5

MIN TYP MAX

0.42

40

25W, Peak IL = 21A

G

=

150°C, R

j

£

= 2.0W VR = 200V.

G

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

050-5944 Rev - 1- 2000

,

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.5

D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

-1

1.0 10