Advanced Power Technology APT APT6015LVR Datasheet

APT6015LVR
600V 38A 0.150
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout..
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-264 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E E
Parameter
Drain-Source Voltage Continuous Drain Current @ T
D
Pulsed Drain Current Gate-Source Voltage Continuous
GS
1
= 25°C
C
Gate-Source Voltage Transient Total Power Dissipation @ T
D
Linear Derating Factor Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
= 25°C
C
(Repetitive and Non-Repetitive)
1
4
TO-264
G
APT6015LVR
600
38
152
±30 ±40
520
4.16
-55 to 150 300
38 50
2500
D
S
UNIT
Amps
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGS, ID = 2.5mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= V
DS
= 0.8 V
DS
= ±30V, V
GS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61
MIN TYP MAX
600
38
0.150 25
UNIT
Amps Ohms
µA
250
±100
24
nA
050-5542 Rev B
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT6015LVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
V
DS
f = 1 MHz
VGS = 10V
V
= 0.5 V
DD
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
S
SD
Characteristic / Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current
Diode Forward Voltage Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
(Body Diode)
2
(VGS = 0V, IS = -I
S
= -I
S
D[Cont.]
= -I
D[Cont.]
, dlS/dt = 100A/µs)
, dlS/dt = 100A/µs)
D[Cont.]
)
= 0V
GS
= 25V
= 15V
= 0.6
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
7500 9000
900 1260 320 480
315 475
45 70
125 190
15 30 13 26 45 70
510
MIN TYP MAX
38
152
1.3
690
15.9
UNIT
pF
nC
ns
UNIT
Amps
ns
µC
050-5542 Rev B
THERMAL CHARACTERISTICS
Symbol
R R
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
θJC θJA
, THERMAL IMPEDANCE (°C/W) Z
Characteristic
Junction to Case Junction to Ambient
0.3
0.1
0.05
0.01
0.005
JC
θ
0.001
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.2
0.1
0.05
0.02
0.01
-4
10
SINGLE PULSE
10
RECTANGULAR PULSE DURATION (SECONDS)
3
See MIL-STD-750 Method 3471
4
Starting Tj = +25°C, L = 3.46mH, RG = 25, Peak IL = 38A
-3
-2
10
-1
10
MIN TYP MAX
0.24 40
1.0 10
UNIT
°C/W
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