Advanced Power Technology APT APT6015JVR Datasheet

APT6015JVR

600V 35A 0.150Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

S

G

®

ISOTOP

G

D

®

S

SOT-227

"UL Recognized"

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

(Repetitive and Non-Repetitive)

1

4

APT6015JVR

600

35

140

±30
±40

450

3.6

-55 to 150
300

35
50

2500

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGS, ID = 2.5mA)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= V

DS

= 0.8 V

DS

= ±30V, V

GS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

MIN TYP MAX

600

35

0.150
25

UNIT

Volts

Amps
Ohms

µA

250

±100

24

nA

Volts

050-5554 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT6015JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

VGS = 10V

V

= 0.5 V

DD

ID = I

D[Cont.]

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

S

SD

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

Diode Forward Voltage
Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

(Body Diode)

2

(VGS = 0V, IS = -I

S

= -I

S

D[Cont.]

= -I

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 25V

= 15V

= 0.6Ω

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7500 9000

900 1260
320 480

315 475

45 70

125 190

15 30
13 26
45 70

510

MIN TYP MAX

35

140

1.3

690

15.9

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5554 Rev C

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

θJC
θJA

, THERMAL IMPEDANCE (°C/W)
Z

Characteristic

Junction to Case
Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting Tj = +25°C, L = 4.08mH, RG = 25Ω, Peak IL = 35A

0.3
D=0.5

JC

θ

0.1

0.05

0.01

0.005

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

-2

10

-1

10

MIN TYP MAX

0.28
40

2500

13

1.0 10

UNIT

°C/W

Volts

lb•in