Advanced Power Technology APT APT6015JN, APT6018JN Datasheet

"UL Recognized" File No. E145592 (S)

D

S

S

G

G

S

D

SOT-227

APT6015JN 600V 38.0A 0.15Ω
APT6018JN 600V 35.0A 0.18Ω

ISOTOP

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

IDM, l

V

P

TJ,T

DSS

I

D

GS

D

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

LM

Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

®

®

SINGLE DIE ISOTOP® PACKAGE

= 25°C

C

1

and Inductive Current Clamped

= 25°C

C

= 25°C unless otherwise specified.

C

APT APT

6015JN 6018JN

600 600

UNIT

Volts

38 35

152 140

Amps

±30
520

4.16

Volts

Watts

W/°C

-55 to 150
300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

2

= VGS, ID = 2.5mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT6015JN
APT6018JN 600
APT6015JN 38
APT6018JN 35
APT6015JN 0.15
APT6018JN 0.18

600

250
1000
±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.06

UNIT

0.24

°C/W

050-6037 Rev E

DYNAMIC CHARACTERISTICS

APT6015/6018JN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

(Body Diode)
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

GS

= 0V

5540 6500
1025 1450

375 570

= 10V

DSS

242 370

30 45

118 175

= 15V

DSS

15 30
24 48
46 75
13 26

MIN TYP MAX

APT6015JN
APT6018JN 35
APT6015JN 152
APT6018JN 140

660 1200

12 24

38

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L
L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.05

0.01

0.005

0.001

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-6037 Rev E

UNIT

3

nH

5

Volts

35

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

in-lbs