Advanced Power Technology APT APT6015B2VR Datasheet
APT6015B2VR
600V 38A 0.150Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • New T-MAX™ Package
(Clip-mounted TO-247 Package)
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
1
= 25°C
C
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
= 25°C
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1
(Repetitive and Non-Repetitive)
1
4
APT6015B2VR
T-MAX™
G
600
38
152
±30
±40
520
4.16
-55 to 150
300
38
50
2500
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGS, ID = 2.5mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= V
DS
= 0.8 V
DS
= ±30V, V
GS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61
MIN TYP MAX
600
38
0.150
25
UNIT
Volts
Amps
Ohms
µA
250
±100
24
nA
Volts
050-5612 Rev B
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT6015B2VR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DS
f = 1 MHz
VGS = 10V
V
= 0.5 V
DD
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
S
SD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
(Body Diode)
2
(VGS = 0V, IS = -I
S
= -I
S
D[Cont.]
= -I
D[Cont.]
, dlS/dt = 100A/µs)
, dlS/dt = 100A/µs)
D[Cont.]
)
= 0V
GS
= 25V
= 15V
= 0.6Ω
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
7500 9000
900 1260
320 480
315 475
45 70
125 190
15 30
13 26
45 70
510
MIN TYP MAX
38
152
1.3
690
15.9
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5612 Rev B
THERMAL CHARACTERISTICS
Symbol
R
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
θJC
θJA
, THERMAL IMPEDANCE (°C/W)
Z
Characteristic
Junction to Case
Junction to Ambient
0.3
0.1
0.05
0.01
0.005
JC
θ
0.001
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.2
0.1
0.05
0.02
0.01
-4
10
SINGLE PULSE
10
RECTANGULAR PULSE DURATION (SECONDS)
3
See MIL-STD-750 Method 3471
4
Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 38A
-3
-2
10
-1
10
MIN TYP MAX
0.24
40
1.0 10
UNIT
°C/W
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