Advanced Power Technology APT APT6011B2VFR Datasheet

APT6011B2VFR

600V 49A 0.110W

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement

FREDFET

T-MAX™

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

D

• Lower Leakage • Faster Switching

G

• Popular

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

T

L

I

AR

E

AR

E

AS

T-MAX™ Package

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

APT6011B2VFR

600

49
196
±30
±40
625

5.0

-55 to 150
300

49
50

3000

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

600

49

24

0.110
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-8061 rev- 01-2000

DYNAMIC CHARACTERISTICS APT6011B2VFR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

V

= 10V

GS

= 0.5 V

V

DD

ID = I

[Cont.] @ 25°C

D

V

= 15V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6W

DSS

DSS

MIN TYP MAX

8310

990
390
370

51

156

17
16
63

6

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

rr

ADVANCED TECHNICAL

Reverse Recovery Time

= -ID [Cont.], di/dt = 100A/µs)

(I

S

1

(Body Diode)

2

dt

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

INFORMATION

T

= 25°C 300

j

T

= 125°C 600

j

T

= 25°C 2.0

j

T

= 125°C 6.8

j

T

= 25°C 15

j

T

= 125°C 27

j

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

4

Starting T

5

IS £ ID [Cont.],

These dimensions are equal to the TO-247AD without mounting hole.

+25°C, L = 2.49mH, R

j

=

di

/

dt

T-MAX™ Package Outline

4.69 (.185)

Drain

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

15.49 (.610)

16.26 (.640)

MIN TYP MAX

MIN TYP MAX

= 100A /µs, T

5.38 (.212)

6.20 (.244)

25W, Peak IL = 49A

G

=

150°C, R

j

£

UNIT

49

196

Amps

1.3
5

Amps

0.20
40

= 2.0W, VR = 200V.

G

Volts

V/ns

ns

µC

UNIT

°C/W

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-8061 rev- 01-2000

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2-Plcs.

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source