Advanced Power Technology APT APT50M80LVR, APT50M80B2VR Datasheet

APT50M80B2VR

APT50M80LVR

500V 58A 0.080W

®

B2VR

POWER MOS V

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Identical Specifications: T-MAX™ or TO-264 Package

• Faster Switching • 100% Avalanche Tested

• Lower Leakage

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

T-MAX™

G

APT50M80

-55 to 150

500

58
232
±30
±40
625

5.0

300

58

50

3000

TO-264

LVR

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

58

24

0.080
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5916 rev- 11-99

DYNAMIC CHARACTERISTICS APT50M80 B2VR - LVR

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

DD

V

GS

= 0.5 V

ID = 0.5 I

VGS = 15V

= 0.5 V

V

DD

ID = I

D[Cont.]

R

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

rr

ADVANCED TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I

(Body Diode)

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

GS

= 10V

D[Cont.]

= 0.6ý

G

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

8630
1160

440
360

57

151

16
18
60

6

MIN TYP MAX

58

232

1.3

680

17.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5916 rev- 11-99

Characteristic

Junction to Case
Junction to Ambient

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

Collector

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

20.80 (.819)

21.46 (.845)

(.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

4.50

5.45 (.215) BSC
2-Plcs.

3

See MIL-STD-750 Method 3471

4

Starting T

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

Collector

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Collector
Emitter

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

+25°C, L = 1.78mH, R

j

=

TO-264 (L) Package OutlineT-MAX™ (B2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

0.48 (.019)

1.30 (.051)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

MIN TYP MAX

0.20
40

25W, Peak IL = 58A

G

=

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Collector
Emitter

UNIT

°C/W