Advanced Power Technology APT APT50M75JLLU2 Datasheet

APT50M75JLLU2

APT50M75JLLU2

500V 51A 0.075W

POWER MOS 7

TM

S

K

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

51

51
50

D

®

D

S

SOT-227

"UL Recognized"

K

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

G

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

ISOTOP

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

G

• Lower Gate Charge, Qg •PFC "Boost" Configuration

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

INFORMATION

= 25°C

C

1

4

APT50M75JLLU2

500

204
±30
±40
465

3.72

-55 to 150
300

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

51

35

0.075
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7095 Rev - 10-2001

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT50M75JLLU2

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

ADVANCE TECHNICAL

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

/

Peak Diode Recovery dv/

dt

1

(Body Diode)

dt

INFORMATION

)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

= -I

S

5

, dlS/dt = 100A/µs)

D[Cont.]

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

5800
1200

90

145

38
66
17
14
38

5

MIN TYP MAX

51

204

1.3

620

14.7
8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

050-7095 Rev - 10-2001

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

0.3
D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

numbers reflect the limitations of the test circuit rather than the

dt

device itself. I

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 1.92mH, R

j

=

S

10

£ -I

-1

MIN TYP MAX

G

di

/

£ 700A/µs V

D[Cont.

dt

]

1.0 10

0.27
40

25W, Peak IL = 51A

=

£ V

R

DSS

T

UNIT

°C/W

£ 150°C

J