Advanced Power Technology APT APT50M60L2VR Datasheet

APT50M60L2VR

500V 77A 0.060W

POWER MOS V

®

TO-264

500

77
308
±30
±40
825

5.0

300

77

50

3200

Max

D

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• TO-264 MAX Package • 100% Avalanche Tested

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

APT50M60

-55 to 150

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

500

77

24

0.060
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5986 rev- 11-2000

DYNAMIC CHARACTERISTICS APT50M60L2VR

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

DD

V

GS

= 0.5 V

ID = 0.5 I

VGS = 15V

= 0.5 V

V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

rr

ADVANCED TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I

(Body Diode)

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

GS

= 10V

D[Cont.]

@ 25°C

= 0.6W

DSS

@ 25°C

DSS

MIN TYP MAX

12000

1600

610
500

80

210

20
25
80

8

MIN TYP MAX

77

308

1.3

680

17.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 1.08mH, R

j

=

TO-264 MAXTM(L2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

Drain

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5986 rev- 11-2000

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.79 (.110)

3.18 (.125)

2-Plcs.

19.51 (.768)

20.50 (.807)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source

MIN TYP MAX

0.15
40

25W, Peak IL = 77A

G

=

UNIT

°C/W