Advanced Power Technology APT APT50M50PVR Datasheet

APT50M50PVR

500V 74.5A 0.050Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,

®

increases packing density and reduces the on-resistance. Power MOS V

also

achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • New High Power P-Pack Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT50M50PVR

P-Pack

G

500

74.5
298

±30
±40

625

5.0

-55 to 150
300

74.5
50

3600

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

74.5

24

0.050
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5836 Rev -

DYNAMIC CHARACTERISTICS

APT50M50PVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

16300

2210

850
690

95

320

25
20
85
12

MIN TYP MAX

74.5
298

1.3

880

31

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

3

PRELIMINARY

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 1.30mH, R

j

=

P-Pack Package Outline

41.53 (1.635)

41.02 (1.615)

3.43 (.135)

2.92 (.115)
(4-Places)

51.05 (2.01)

50.55 (1.99)

35.81 (1.41)

35.31 (1.39)

29.34 (1.155)

29.08 (1.145)

35.18 (1.385)

34.67 (1.365)

28.70 (1.130)

28.45 (1.120)

3.43 (.135)

2.92 (.115)
(4-Places)

4.06 (.160)

3.81 (.150)
(5 Places)

MIN TYP MAX

G

=

9.27 (.365)

8.64 (.340)

1.40 (.055)

1.02 (.040)

Drain Gate

0.20

40

25Ω, Peak IL =74.5A

Source Source Sense

UNIT

°C/W

050-5836 Rev -

11.63 (.458)

11.13 (.438)

10.92 (.430)

10.67 (.420)

4.39 (.173)

4.14 (.163)
(4 Places)

12.45 (.490)

11.94 (.470)

Dimensions in Millimeters and (Inches)

.635 (.025)
.381 (.015)

5.33 (.210)

4.83 (.190)