Advanced Power Technology APT APT50M50L2LL Datasheet

APT50M50L2LL

500V 87A 0.050W

POWER MOS 7

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

TM

TO-264

Max

DS(ON)

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance •Increased Power Dissipation

D

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg • Popular TO-264

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

STATIC ELECTRICAL CHARACTERISTICS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

ADVANCE TECHNICAL

= 25°C

C

= 25°C

C

1

4

INFORMATION

MAX Package

APT50M50L2LL

-55 to 150

500

87
348
±30
±40
890

7.12

300

87

50

3200

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

87

35

0.050
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7043 Rev- 5-2001

DYNAMIC CHARACTERISTICS

APT50M50L2LL

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

ADVANCE TECHNICAL

Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

INFORMATION

, dlS/dt = 100A/µs)

D[Cont.]

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

= 15V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

9840
2030

150
245

65

110

25
16
51

9

MIN TYP MAX

87

348

1.3

760

24

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 0.85mH, R

j

=

TO-264 MAXTM(L2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7043 Rev- 5-2001

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

2.79 (.110)

3.18 (.125)

2-Plcs.

19.51 (.768)

20.50 (.807)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source

MIN TYP MAX

0.14
40

25W, Peak IL = 87A

G

=

UNIT

°C/W