Advanced Power Technology APT APT50GF120LR Datasheet
APT50GF120B2R
G
C
E
APT50GF120LR
1200V 80A
APT50GF120B2R
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
T-Max
(B2R)
™
TO-264
(LR)
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
C
E
G
C
APT50GF120LR
E
G
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
V
I
C1
I
C2
I
CM1
I
CM2
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage
EC
Gate-Emitter Voltage
GE
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20KΩ)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
1
@ TC = 90°C
2
APT50GF120B2R/LR
1200
1200
15
±20
80
50
160
100
85
390
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
RBV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.5mA)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
1200
-15
4.5 5.5 6.5
2.9 3.4
3.5 4.1
0.5
TBD
±100
UNIT
Volts
mA
nA
052-6216 RevA
DYNAMIC CHARACTERISTICS
APT50GF120B2R/LR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
PRELIMINARY
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.50V
CC
I
CES
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.80V
CC
I
CES
= I
C
C2
RG = 10Ω
Inductive Switching (150°C)
V
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
R
T
J
(Peak) = 0.66V
CLAMP
V
R
T
V
= 20V, I
CE
= 15V
GE
I
= I
C
C2
= 10Ω
G
= +150°C
= 15V
GE
I
= I
C
C2
= 10Ω
G
= +25°C
J
CES
°C)
CES
= I
C
C2
MIN TYP MAX
3450 4850
330 500
230 350
330 450
30 50
205 290
55
245
155
275
45 75
100 150
540 810
40 80
7.0
7.0
14.0
50
115
480
40
12.0
8
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25Ω, L = 68µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
4
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6216 Rev A
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX
0.32
40
10
UNIT
°C/W
lb•in
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