Advanced Power Technology APT APT50GF120JRD Datasheet

APT50GF120JRD
1200V 75A
C
®
E
SOT-227
"UL Recognized"
C
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non­Punch Through Technology the Fast IGBT™ combined with an APT free­wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
E
G
ISOTOP
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
I
C1
I
C2
I
CM1
I
CM2
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Gate-Emitter Voltage
GE
Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20K)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
1
@ TC = 90°C
G
APT50GF120JRD
1200 1200
±20
75
50 150 100 460
-55 to 150 300
E
UNIT
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33) 5 56 4797 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (VGE = ±20V, V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
APT Website - http://www.advancedpower.com
= 0V, IC = 1.0mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)
= 0V)
CE
2
2
MIN TYP MAX
1200
4.5 5.5 6.5
2.9 3.4
3.5 4.1
1.0
TBD
±100
UNIT
Volts
mA
nA
052-6257 Rev A
DYNAMIC CHARACTERISTICS (IGBT) APT50GF120JRD
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy
4
Turn-off Switching Energy Total Switching Losses
4
Turn-on Delay Time Rise Time
PRELIMINARY
Turn-off Delay Time Fall Time Total Switching Losses
4
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.8V
CC
CES
I
= I
C
C2
RG = 5
Inductive Switching (150°C)
V
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
GE
I
R
T
= +150°C
J
(Peak) = 0.66V
CLAMP
V
GE
I
R
T
J
VCE = 20V, I
= 15V
= I
C
C2
= 5
G
= 15V
= I
C
C2
= 5
G
= +25°C
CES
°C)
CES
= I
C
C2
MIN TYP MAX
5500 7400
650 910 330 500
525
45
310
50 160 300 190
45 110 600 150
7
8 15 45
110 500
55
12.5
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
052-6257 Rev A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient
Package Weight
T
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
MIN TYP MAX
0.24
0.66 20
1.03
29.2 10
1.1
UNIT
°C/W
oz
gm lb•in N•m
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