Advanced Power Technology APT APT5040CNR Datasheet

G

D

TO-254

S

TM

POWER MOS IV

APT5040CNR 500V 13.0A 0.400Ω

Avalanche Rated

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

•Faster Switching •100% Avalanche Tested •Popular TO-254 Package

•Low Gate Charge •Similar to the 2N7228, JX2N7228 and JV2N7228

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

3

APT5040CNR

500

13
52

±30
±40

150

1.2

-55 to 150
300

13
20

800

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

500

13

24

0.40
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5016 Rev -

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT5040CNR

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

f = 1 MHz

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.80Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

SD

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

(Body Diode)

GS

= 0V

DSS

DSS

MIN TYP MAX

15 22

1430 1800

330 465
130 200

71 105

8.7 12
37 55
14 28
21 42
44 66
15 30

MIN TYP MAX

13
52

1.3

296 592

4.4 8.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5016 Rev -

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

Starting T

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

+25°C, L = 9.47mH, R

j

=

1.0

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

25Ω, Peak IL = 13A

G

=

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

MIN TYP MAX

1.0 10

UNIT

0.80

W/°C

50