Advanced Power Technology APT APT5030BN, APT5025BN Datasheet
D
G
S
TO-247
APT5025BN 500V 23.0A 0.25Ω
APT5030BN 500V 21.0A 0.30Ω
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
P
TJ,T
DSS
I
D
DM
GS
D
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
®
= 25°C unless otherwise specified.
C
APT APT
5025BN 5030BN
500 500
= 25°C
C
1
23 21
92 84
±30
= 25°C
C
310
2.48
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
2
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT5025BN
500
APT5030BN 500
APT5025BN 23
APT5030BN 21
APT5025BN 0.25
APT5030BN 0.30
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
UNIT
0.40
°C/W
40
050-5007 Rev C
DYNAMIC CHARACTERISTICS
APT5025/5030BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
t
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
1
(Body Diode)
2
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
Q
MIN TYP MAX
GS
= 0V
2380 2950
522 730
196 290
= 10V
DSS
83 130
12.6 19
51 76
= 15V
DSS
14 28
27 55
61 92
36 71
MIN TYP MAX
APT5025BN
APT5030BN 21
APT5025BN 92
APT5030BN 84
320 640
5.5 11
23
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5007 Rev C
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
LM
1.0
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.1
0.05
0.01
0.005
0.001
10
SINGLE PULSE
-4
10
Test Conditions / Part Number
V
= 0.4 V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT5025BN 92
APT5030BN 84
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
10
MIN TYP MAX
310
310
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
1.0 10
UNIT
Watts
Amps
t
1
t
2
t
1
/
t
2
+ T
θJC
C
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