Advanced Power Technology APT APT5024SVR Datasheet
APT5024SVR
500V 22A 0.240Ω
POWER MOS V
Power MOS V is a new generation of high voltage N-Channel enhancement
®
D3PAK
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Surface Mount D
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
I
V
V
P
TJ,T
T
I
E
E
DSS
I
D
DM
GS
GSM
D
STG
L
AR
AR
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
= 25°C
C
1
4
3
PAK Package
G
APT5024SVR
500
22
88
±20
±30
280
2.24
-55 to 150
300
22
30
1210
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 9215 15 FAX: (33) 556479761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
2
(V
DS
= VGS, ID = 1.0mA)
DS
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= V
DS
= 0.8 V
DS
= ±20V, V
GS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
500
22
24
0.24
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5529 Rev -
DYNAMIC CHARACTERISTICS
APT5024SVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DS
f = 1 MHz
V
GS
= 0.5 V
V
DD
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
V
t
Q
I
SM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(Body Diode)
(VGS = 0V, IS = -I
S
= -I
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 25V
= 10V
= 15V
= 1.6Ω
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
3400
470
180
138
19
65
11
10
44
7
MIN TYP MAX
22
88
1.3
415
6.6
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
3
PRELIMINARY
See MIL-STD-750 Method 3471
4
Starting Tj = +25°C, L = 5.00mH, RG = 25Ω, Peak IL = 22A
D3PAK Package Outline
Drain
(Heat Sink)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
{3 Plcs}
1.22 (.048)
1.32 (.052)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
1.04 (.041)
1.15 (.045)
1.27 (.050)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
1.40 (.055)
MIN TYP MAX
13.41 (.528)
13.51 (.532)
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
0.45
40
UNIT
°C/W
050-5529 Rev -
Source
Drain
Dimensions in Millimeters (Inches)
Gate
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