Advanced Power Technology APT APT5015BLC Datasheet

APT5015BLC
500V 32A 0.150 W
POWER MOS VI
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize C Lower gate charge coupled with Power MOS VI
TM
and C
TM
optimized gate layout,
iss
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TO-247
.
delivers exceptionally fast switching speeds.
• Lower Gate Charge • Lower Input Capacitance
• Faster Switching • Easier To Drive
G
D
• 100% Avalanche Tested • Popular TO-247 Package
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy
ADVANCED TECHNICAL
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
INFORMATION
APT5015BLC
500
32 128 ±30 ±40 370
2.96
-55 to 150 300
32 30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
500
32
35
0.150 25
250
±100
UNIT
Volts
Amps Ohms
µA
nA
Volts
050-5918 Rev - 11-99
DYNAMIC CHARACTERISTICS
APT5015BLC
Symbol
C
iss
C
oss
C
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Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
rr
rr
ADVANCED TECHNICAL
Reverse Recovery Time (IS = -I Reverse Recovery Charge (I
(Body Diode)
)
INFORMATION
D[Cont.]
= -I
S
D[Cont.]
D[Cont.]
, dlS/dt = 100A/µs)
, dlS/dt = 100A/µs)
= 0V
GS
= 10V
@ 25°C
= 15V
@ 25°C
= 1.6W
DSS
DSS
MIN TYP MAX
2970
580 115
93 20 45 10 15 28
8
MIN TYP MAX
32
128
1.3
510
10.2
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case Junction to Ambient
qJA
3
See MIL-STD-750 Method 3471
4
Starting T
+25°C, L = 2.54mH, R
j
=
TO-247 Package Outline
4.69 (.185)
Drain
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
Dimensions in Millimeters and (Inches)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC 2-Plcs.
15.49 (.610)
16.26 (.640)
MIN TYP MAX
G
=
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate Drain Source
0.34 40
25W, Peak IL = 32A
UNIT
°C/W
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5918 Rev - 11-99
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
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