Advanced Power Technology APT APT5014LLC Datasheet

APT5014B2LC

APT5014LLC

500V 37A 0.140W

POWER MOS VI

TM

Power MOS VITM is a new generation of low gate charge, high voltage

B2LC

T-MAX™

TO-264

N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
Lower gate charge coupled with Power MOS VI

TM

optimized gate layout,

and C

iss

delivers exceptionally fast switching speeds.

• Identical Specifications: T-MAX™ or TO-264 Package

• Lower Gate Charge & Capacitance • Easier To Drive

rss

.

LLC

D

G

• 100% Avalanche Tested • Faster switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

APT5014

500

37
148
±30
±40
450

3.6

-55 to 150
300

37
35

1600

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

37

35

0.140
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5919 rev- 11-99

DYNAMIC CHARACTERISTICS APT5014 B2LC - LLC

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

DD

V

GS

= 0.5 V

ID = 0.5 I

VGS = 15V

= 0.5 V

V

DD

ID = I

D[Cont.]

R

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

ADVANCED TECHNICAL

Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

INFORMATION

, dlS/dt = 100A/µs)

D[Cont.]

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

D[Cont.]

= 0.6ý

G

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

3780

720
160
110

25
65
10
17
23

5

MIN TYP MAX

37

148

1.3

595

11.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5919 rev- 11-99

Characteristic

Junction to Case
Junction to Ambient

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

Collector

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

20.80 (.819)

21.46 (.845)

(.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

4.50

5.45 (.215) BSC
2-Plcs.

3

See MIL-STD-750 Method 3471

4

Starting T

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

Collector

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Collector
Emitter

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

+25°C, L = 2.34mH, R

j

=

TO-264 (L) Package OutlineT-MAX™ (B2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

0.48 (.019)

1.30 (.051)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

MIN TYP MAX

0.28
40

25W, Peak IL = 37A

G

=

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Collector
Emitter

UNIT

°C/W