Advanced Power Technology APT APT5010LLC Datasheet
APT5010B2LC
APT5010LLC
500V 47A 0.100W
POWER MOS VI
TM
Power MOS VITM is a new generation of low gate charge, high voltage
B2LC
T-MAX™
TO-264
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
. Lower gate charge coupled with Power MOS VITM optimized gate
C
rss
layout, delivers exceptionally fast switching speeds.
• Identical Specifications:
T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance • Easier To Drive
• 100% Avalanche Tested • Faster switching
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
= 25°C
C
1
4
iss
and
G
-55 to 150
D
S
APT5010
500
47
188
±30
±40
520
4.16
300
47
50
2500
LLC
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
500
47
35
0.100
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5900 Rev A 8-2000
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
DYNAMIC CHARACTERISTICS
APT5010B2LC - LLC
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
VDS = 25V
f = 1 MHz
V
GS
= 0.5 V
V
DD
ID = I
D[Cont.]
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
= -I
S
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
= 10V
@ 25°C
= 15V
@ 25°C
DSS
DSS
MIN TYP MAX
5375 6500
1040 1460
185 280
145 220
34 41
76 120
12 24
15 30
28 42
4.6 10.0
MIN TYP MAX
47
188
1.3
590
13
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5900 Rev A 8-2000
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
0.3
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.001
-5
10
3
See MIL-STD-750 Method 3471
4
Starting T
D=0.5
0.2
0.1
0.05
0.02
0.01
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
-2
10
+25°C, L = 2.26mH, R
j
=
10
MIN TYP MAX
0.24
UNIT
°C/W
40
25W, Peak IL = 47A
G
=
-1
1.0 10
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