Advanced Power Technology APT APT5010JVRU2 Datasheet
APT5010JVRU2
SOT-227
G
S
K
D
ISOTOP
®
"UL Recognized"
500V 44A 0.100Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular SOT-227 Package
• Single Die MOSFET & FRED • PFC "Boost" Configuration
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
®
G
APT5010JVRU2
500
44
176
±30
±40
450
3.6
-55 to 150
300
44
50
2500
D
K
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
(V
DS
> I
= 0V, ID = 250µA)
GS
x R
D(on)
2
DS(on)
(VGS = 10V, 0.5 I
, VGS = 0V)
DSS
= 0.8 V
DS
DSS
Max, VGS = 10V)
)
D[Cont.]
, VGS = 0V, TC = 125°C)
= 0V)
DS
MIN TYP MAX
500
44
24
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
0.100
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5558 Rev A
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT5010JVRU2
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
7410
1050
390
312
37
127
18
16
54
5
MIN TYP MAX
44
176
1.3
620
14.7
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5558 Rev A
THERMAL/PACKAGE CHARACTERISTICS
Symbol
R
R
V
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
3
See MIL-STD-750 Method 3471
4
Starting T
0.3
D=0.5
, THERMAL IMPEDANCE (°C/W)
Z
JC
θ
0.1
0.05
0.01
0.005
0.001
-5
10
0.2
0.1
0.05
0.02
0.01
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
SINGLE PULSE
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
+25°C, L = 2.58mH, R
j
=
-1
10
MIN TYP MAX
0.28
40
2500
13
25Ω, Peak IL = 44A
G
=
1.0 10
UNIT
°C/W
Volts
lb•in
APT5010JVRU2
100
80
VGS=7V, 8V, 10V & 15V
6V
100
80
VGS=7V, 8V & 10V
VGS=15V
6V
60
40
20
, DRAIN CURRENT (AMPERES)
D
0
050100150200250 024681012
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.5V
5V
4.5V
4V
60
40
20
, DRAIN CURRENT (AMPERES)
D
0
5.5V
4.5V
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
60
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +25°C
TJ = +125°C
1.5
1.4
1.3
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
1.2
40
1.1
20
, DRAIN CURRENT (AMPERES) I
D
0
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
TJ = +125°C
TJ = +25°C
02468 020406080100120
V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
TJ = -55°C
1.0
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.9
DS
1.15
VGS=10V
VGS=20V
5V
4V
40
30
20
10
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
, DRAIN-TO-SOURCE BREAKDOWN R
1.10
1.05
1.00
0.95
DSS
0.90
1.2
1.1
1.0
1.5
0.9
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.7
GS
V
0.6
050-5558 Rev A
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