Advanced Power Technology APT APT5010B2VR Datasheet
APT5010B2VR
500V 47A 0.100Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • New T-MAX™ Package
(Clip-mounted TO-247 Package)
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
1
= 25°C
C
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
(Repetitive and Non-Repetitive)
1
4
APT5010B2VR
T-MAX™
G
500
47
188
±30
±40
520
4.16
-55 to 150
300
47
50
2500
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
500
47
24
0.100
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5611 Rev B
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT5010B2VR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
7400 8900
1000 1400
380 570
312 470
50 75
127 190
14 30
16 32
54 80
510
MIN TYP MAX
47
188
1.3
620
14.7
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5611 Rev B
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
θJA
0.3
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.001
-5
10
3
See MIL-STD-750 Method 3471
4
Starting T
5
These dimensions are equal to the TO-247AD without mounting hole
D=0.5
0.2
0.1
0.05
0.02
0.01
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
-2
10
+25°C, L = 2.26mH, R
j
=
-1
10
MIN TYP MAX
0.24
40
25Ω, Peak IL = 47A
G
=
1.0 10
UNIT
°C/W
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