Advanced Power Technology APT APT40M90JN, APT40M75JN Datasheet

"UL Recognized" File No. E145592 (S)

D

S

S

G

G

S

D

SOT-227

APT40M75JN 400V 56.0A 0.075Ω
APT40M90JN 400V 51.0A 0.090Ω

ISOTOP

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

IDM, l

V

P

TJ,T

DSS

I

D

GS

D

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

LM

Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

®

®

SINGLE DIE ISOTOP® PACKAGE

= 25°C

C

1

and Inductive Current Clamped

= 25°C

C

= 25°C unless otherwise specified.

C

APT APT

40M75JN 40M90JN

400 400

UNIT

Volts

56 51

224 204

Amps

±30
520

4.16

Volts

Watts

W/°C

-55 to 150
300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

2

= VGS, ID = 2.5mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT40M75JN
APT40M90JN 400
APT40M75JN 56
APT40M90JN 51
APT40M75JN 0.075
APT40M90JN 0.090

400

250
1000
±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.06

UNIT

0.24

°C/W

050-4037 Rev E

DYNAMIC CHARACTERISTICS

APT40M75/40M90JN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

(Body Diode)
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

GS

= 0V

5630 6800
1320 1950

510 720

= 10V

DSS

241 370

34 50

117 180

= 15V

DSS

16 32
31 62
45 70
13 26

MIN TYP MAX

APT40M75JN
APT40M90JN 51
APT40M75JN 224
APT40M90JN 204

370 740

816

56

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L
L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.05

0.01

0.005

0.001

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-4037 Rev E

UNIT

3

nH

5

Volts

35

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

in-lbs