Advanced Power Technology APT APT40M42JN Datasheet
D
S
S
G
G
D
SOT-227
S
ISOTOP
®
POWER MOS IV
®
APT40M42JN 400V 86A 0.042Ω
"UL Recognized" File No. E145592 (S)
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
IDM, l
V
P
TJ,T
DSS
I
D
GS
D
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
LM
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
= 25°C unless otherwise specified.
C
APT
40M42JN
400
UNIT
Volts
86
344
Amps
±30
690
5.52
Volts
Watts
W/°C
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
2
= VGS, ID = 5.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT40M42JN
APT40M42JN 86
APT40M42JN 0.042
400
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33)55647 97 61
Characteristic
Junction to Case
ΘJC
Case to Sink
ΘCS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.05
UNIT
0.18
°C/W
050-4038 Rev E
DYNAMIC CHARACTERISTICS
APT40M42JN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MIN TYP MAX
GS
= 0V
11140 14000
2600 3640
960 1440
= 10V
DSS
507 760
70 105
234 350
= 15V
DSS
21 40
41 80
62 95
14 30
MIN TYP MAX
APT40M42JN
APT40M42JN 344
535 1070
13 26
86
1.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
PACKAGE CHARACTERISTICS
L
L
Characteristic / Test Conditions
Internal Drain Inductance
D
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
S
(Measured From Drain Terminal to Center of Die.)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
0.2
D=0.5
0.1
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.05
0.01
0.005
0.001
0.0005
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
MIN TYP MAX
2500
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
10
1.0 10
Symbol
V
Isolation
C
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-4038 Rev E
UNIT
3
nH
5
Volts
70
13
t
1
t
2
t
1
/
t
2
+ T
θJC
C
pF
in-lbs
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