Advanced Power Technology APT APT4025BN, APT4020BN Datasheet
D
G
S
TO-247
APT4020BN 400V 26.0A 0.20Ω
APT4025BN 400V 23.0A 0.25Ω
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
P
TJ,T
DSS
I
D
DM
GS
D
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
®
= 25°C unless otherwise specified.
C
APT APT
4020BN 4025BN
400 400
= 25°C
C
1
26 23
104 92
±30
= 25°C
C
310
2.48
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
2
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT4020BN
400
APT4025BN 400
APT4020BN 26
APT4025BN 23
APT4020BN 0.20
APT4025BN 0.25
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
UNIT
0.40
°C/W
40
050-4007 Rev C
DYNAMIC CHARACTERISTICS
APT4020/4025BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
t
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
1
(Body Diode)
2
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
Q
MIN TYP MAX
GS
= 0V
2380 2950
563 750
207 310
= 10V
DSS
94 130
11 16
47 70
= 15V
DSS
14 28
29 57
60 90
40 80
MIN TYP MAX
APT4020BN
APT4025BN 23
APT4020BN 104
APT4025BN 92
360 720
612
26
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-4007 Rev C
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
LM
1.0
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.1
0.05
0.01
0.005
0.001
10
SINGLE PULSE
-4
10
Test Conditions / Part Number
V
= 0.4 V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT4020BN 104
APT4025BN 92
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
10
MIN TYP MAX
310
310
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
1.0 10
UNIT
Watts
Amps
t
1
t
2
t
1
/
t
2
+ T
θJC
C
Loading...