Advanced Power Technology APT APT4016BVR Datasheet
APT4016BVR
400V 27A 0.160Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-247 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
1
= 25°C
C
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
(Repetitive and Non-Repetitive)
1
4
APT4016BVR
TO-247
G
400
27
108
±30
±40
280
2.24
-55 to 150
300
27
30
1210
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 579215 15 FAX: (33) 55647 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
400
27
24
0.16
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5524 Rev C
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT4016BVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 1.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
3350 4020
510 715
198 300
135 200
24 36
60 90
11 22
10 20
48 75
612
MIN TYP MAX
27
108
1.3
380
6.4
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5524 Rev C
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
θJA
0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.001
-5
10
3
See MIL-STD-750 Method 3471
4
Starting T
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
+25°C, L = 3.32mH, R
j
=
-1
10
MIN TYP MAX
0.45
40
25Ω, Peak IL = 27A
G
=
1.0 10
UNIT
°C/W
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