Advanced Power Technology APT APT33GF120HR Datasheet

APT33GF120HR

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,

fast switching speed and low Collector-Emitter On voltage.

1200V 38A

TO-258

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

• Hermetic Package

C

E

G

G

C

E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I
I

I

CM

I

E

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage

GE

Continuous Collector Current @ T

C1

Continuous Collector Current @ T

C2

Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R

LM

Single Pulse Avalanche Energy

AS

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KW)

GE

= 25°C

C

= 90°C

C

1

@ TC = 25°C

2

= 11W TC = 125°C

g

APT33GF120HR

1200
1200

±20

38
33
76
66
65

205

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

PRELIMINARY

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (V

(ON)

Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGE, IC = 700µA, Tj = 25°C)

CE

= 15V, IC = IC2, Tj = 25°C)

GE

= 15V, IC = IC2, Tj = 125°C)

GE

= V

CE

CES

= V

CE

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 0.8mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

1200

4.5 5.5 6.5

2.7 3.2

3.3 3.9

0.8

5.0

±100

UNIT

Volts

mA

nA

050-5974 Rev - 6-2000

DYNAMIC CHARACTERISTICS APT33GF120HR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

PRELIMINARY

Total Switching Losses
Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG = 10W

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

GE

I

C

R

G

T

= +150°C

J

= 15V

= I

C2

= 10W

CES

Inductive Switching (25°C)

(Peak) = 0.66V

V

CLAMP

V

CE

V

= 15V

GE

I

= I

C

R

= 10W

G

T

= +25°C

J

= 20V, I

C2

CES

= I

C

C2

MIN TYP MAX

1850

200
110

165

20

100

30
140
150
200

28

60
280

30

3.0

3.0

6.0
28
70

250

25

5.0

8.5

20

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

IC = IC2, RGE = 25W, L = 119µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-5974 Rev - 6-2000

Characteristic

Junction to Case

QJC

Junction to Ambient

QJA

MIN TYP MAX

0.61
40

UNIT

°C/W