Advanced Power Technology APT APT33GF120LRD, APT33GF120B2RD Datasheet

APT33GF120B2RD

APT33GF120LRD

1200V 52A

APT33GF120B2RD

Fast IGBT & FRED

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-

T-Max

(B2RD)

™

TO-264

(LRD)

Punch Through Technology the Fast IGBT™ combined with an APT free­wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

G

C

E

G

C

APT33GF120LRD

E

C

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I

C1

I

C2

I

CM1

I

CM2

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage

GE

Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

G

E

APT33GF120B2RD/LRD

1200
1200

±20

52
33

104

66

300

-55 to 150
300

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (VGE = ±20V, V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

APT Website - http://www.advancedpower.com

= 0V, IC = 0.5mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= 0V)

CE

2

2

MIN TYP MAX

1200

4.5 5.5 6.5

2.7 3.2

3.3 3.9

0.5

5.0

±100

UNIT

Volts

mA

nA

052-6254 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT33GF120B2RD/LRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy

4

Turn-off Switching Energy
Total Switching Losses

4

Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG =10Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +25°C

J

V

= 20V, I

CE

= 25A

C

CES

°C)

CES

MIN TYP MAX

1650 2200

230 325
110 160

165 250

20 30

100 150

30
140
155
200

28

60
280

30

3.0

3.0

6.0
28
70

250

25

5.0

8.5 20

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Leakages include the FRED and IGBT.

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6254 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

0.42

0.90
40

0.22

6.1
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m

APT33GF120B2RD/LRD

PRELIMINARY

Power dissipation

P

parameter:

P

tot

T

tot

= ƒ(

)

C

≤

T

150 °C

j

320

W

240

200

160

120

80

40

0

0 20 40 60 80 100 120 °C 160

Collector current

I

T

= ƒ(

C

parameter:

I

C

T

C

)

C

≥

V

15 V ,

GE

55

A

45

40

35

30

25

20

15

10

5
0

0 20 40 60 80 100 120 °C 160

T

j

≤

150 °C

T

C

Safe operating area

I

V

= ƒ(

C

parameter:

I

C

10

10

10

10

10

A

)

CE

D

, T

= 0

C

3

2

1

0

-1

10

0

10

1

= 25°C ,

10

Transient thermal impedance IGBT

Z

th JC

≤

T

150 °C

j

t

= 2.0µs

p

10 µs

100 µs

1 ms

10 ms

DC

2

10

3

V

V

CE

parameter:

Z

thJC

= ƒ(

10

K/W

10

10

10

0

-1

-2

-3

10

t

p

-5

)

D = t

T

/

p

single pulse

-4

10

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

10 0 s

t

p

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

052-6254 Rev A