Advanced Power Technology APT APT30M75SLL, APT30M75BLL Datasheet

APT30M75BLL

APT30M75SLL

300V 44A 0.075W

POWER MOS 7

TM

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

along with exceptionally fast switching speeds inherent with APT's

BLL

D3PAK

TO-247

SLL

patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

3

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR
AS

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

PAK Package

G

APT30M75

300

44
176
±30
±40
325

2.60

-55 to 150
300

44
30

1300

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

300

44

35

0.075
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7155 Rev - 11-2001

DYNAMIC CHARACTERISTICS

APT30M75 BLL - SLL

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

GS

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

ADVANCE TECHNICAL

Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

/

Peak Diode Recovery dv/

dt

(Body Diode)

INFORMATION

dt

)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

= -I

S

5

, dlS/dt = 100A/µs)

D[Cont.]

= 0V

= 10V

@ 25°C

@ 25°C

DSS

DSS

MIN TYP MAX

3160

750

36
59
16
23
11
10
27

9

MIN TY P MAX

44

176

1.3

390

6.0
5

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Drain

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 1.34mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

Drain

(Heat Sink)

0.46 (.018)

{3 Plcs}

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.22 (.048)

1.32 (.052)

MIN TYP MAX

25W, Peak IL = 44A

G

=

di

/

£ 700A/µs V

]

15.95 (.628)

16.05 (.632)

Revised

4/18/95

dt

13.79 (.543)

13.99 (.551)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC
{2 Plcs.}

Drain

Gate

D[Cont.

Dimensions in Millimeters (Inches)

1.04 (.041)

1.15 (.045)

1.27 (.050)

1.40 (.055)

Source

£ V

R

0.38
40

T

DSS

J

13.41 (.528)

13.51 (.532)

Revised
8/29/97

3.81 (.150)

4.06 (.160)
(Base of Lead)

Heat Sink (Drain)
and Leads
are Plated

UNIT

°C/W

£ 150°C

11.51 (.453)

11.61 (.457)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7155 Rev - 11-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058