Advanced Power Technology APT APT30M70BVR Datasheet
APT30M70BVR
300V 48A 0.070Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-247 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
1
= 25°C
C
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
= 25°C
C
(Repetitive and Non-Repetitive)
1
4
APT30M70BVR
TO-247
G
300
48
192
±30
±40
370
2.96
-55 to 150
300
48
30
1300
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGS, ID = 1.0mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= V
DS
= 0.8 V
DS
= ±30V, V
GS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 9761
MIN TYP MAX
300
48
0.070
25
UNIT
Volts
Amps
Ohms
µA
250
±100
24
nA
Volts
050-5502 Rev C
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT30M70BVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DS
f = 1 MHz
VGS = 10V
V
= 0.5 V
DD
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
(Body Diode)
2
(VGS = 0V, IS = -I
S
= -I
S
D[Cont.]
= -I
D[Cont.]
, dlS/dt = 100A/µs)
, dlS/dt = 100A/µs)
D[Cont.]
)
= 0V
GS
= 25V
= 15V
= 1.6Ω
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
4890 5870
882 1235
277 415
152 225
35 52
66 99
14 28
21 42
57 85
10 20
MIN TYP MAX
48
192
1.3
440
5.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5502 Rev C
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
0.4
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.001
-5
10
3
See MIL-STD-750 Method 3471
4
Starting Tj = +25°C, L = 1.13mH, RG = 25Ω, Peak IL = 48A
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
-1
10
MIN TYP MAX
0.34
40
1.0 10
UNIT
°C/W
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