Advanced Power Technology APT APT30M40LVR, APT30M40B2VR Datasheet
APT30M40B2VR
APT30M40LVR
300V 76A 0.040W
®
B2VR
POWER MOS V
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout..
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular
T-MAX™ or TO-264
Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
T-MAX™
G
APT30M40
-55 to 150
D
S
300
76
304
±30
±40
520
4.16
300
76
50
2500
TO-264
LVR
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 5792 1515 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
300
76
24
0.040
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5541 Rev D 11-2001
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT30M40 B2VR - LVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
= -I
S
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
8500 10200
1500 2100
390 585
285 425
56 85
120 180
16 32
20 40
48 72
48
MIN TYP MAX
76
304
1.3
530
11.5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5541 Rev D 11-2001
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
qJA
0.3
D=0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.001
-5
10
0.2
0.1
0.05
0.02
0.01
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
10
RECTANGULAR PULSE DURATION (SECONDS)
3
See MIL-STD-750 Method 3471
4
Starting T
-3
-2
10
+25°C, L = 870µH, R
j
=
-1
10
MIN TYP MAX
0.24
40
25W, Peak IL = 76A
G
=
1.0 10
UNIT
°C/W
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