Advanced Power Technology APT APT30M30LLL, APT30M30B2LL Datasheet

APT30M30B2LL

APT30M30LLL

300V 100A 0.030W

POWER MOS 7

TM

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

B2LL

T-MAX™

TO-264

LLL

D

• Lower Input Capacitance •Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •Popular

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

STATIC ELECTRICAL CHARACTERISTICS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

ADVANCE TECHNICAL

C

5

= 25°C

C

1

INFORMATION

T-MAX™ or TO-264 Package

= 25°C

4

5

G

APT30M30

-55 to 150

300
100
400
±30
±40
690

5.52

300
100

50

3000

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

300
100

35

0.030
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7153 Rev - 11-2001

DYNAMIC CHARACTERISTICS APT30M30 B2LL - LLL

Symbol

C

C

C

Q
Q
Q

t

d(on)

t

t

d(off)

t

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time
Rise Time

r

Turn-off Delay Time
Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

rr

/

dt

ADVANCE TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I
Peak Diode Recovery dv/

(Body Diode)

dt

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

6

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7830
1870

89

146

40
56
15
22
35

8

MIN TYP MAX

100
400

1.3

450

10.0
5

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471 device itself. I

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

4

Starting T

5

The maximum current is limited by lead temperature

6dv

/

dt

+25°C, L = .6mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

S

£ -I

D[Cont.

]

T-MAXTM (B2) Package Outline TO-264 (L) Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

Drain

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7153 Rev - 11-2001

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

Drain

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

2-Plcs.

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

MIN TYP MAX

0.18

25W, Peak IL = 100A

G

=

di

/

£ 700A/µs V

dt

19.51 (.768)

20.50 (.807)

2.79 (.110)

3.18 (.125)

2-Plcs.

£ V

R

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source

40

DSS

T

UNIT

°C/W

£ 150°C

J