Advanced Power Technology APT APT30GT60CR Datasheet
APT30GT60CR
600V 30A
Thunderbolt IGBT
TO-254
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
• Low Tail Current • Ultra Low Leakage Current
C
• Avalanche Rated • RBSOA and SCSOA Rated
• Hermetic Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
V
I
I
I
CM
I
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage
EC
Gate-Emitter Voltage
GE
Continuous Collector Current @ T
C1
Continuous Collector Current @ T
C2
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
LM
Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20KW)
GE
4
C
= 60°C
C
1
@ TC = 25°C
2
= 25°C
= 11W TC = 125°C
g
APT30GT60CR
TO-254
E
G
600
600
15
±20
30
30
110
60
65
100
-55 to 150
300
C
G
E
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 921515 FAX: (33)556 47 9761
PRELIMINARY
Symbol
BV
RBV
VGE(TH)
V
CE
I
CES
I
GES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
(ON)
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 700µA, Tj = 25°C)
CE
= 15V, IC = IC2, Tj = 25°C)
GE
= 15V, IC = IC2, Tj = 150°C)
GE
= V
CE
CES
= V
CE
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.5mA, Tj = -55°C)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 150°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
600
-15
345
1.6 2.0 2.5
2.8
40
1000
±100
UNIT
Volts
µA
nA
050-5972 Rev - 6-2000
DYNAMIC CHARACTERISTICS APT30GT60CR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
PRELIMINARY
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.8V
CC
CES
I
= I
C
C2
RG = 10W
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
GE
I
C
R
G
T
= +150°C
J
= 15V
= I
C2
= 10W
CES
Inductive Switching (25°C)
(Peak) = 0.66V
V
CLAMP
V
CE
V
= 15V
GE
I
= I
C
R
= 10W
G
T
= +25°C
J
= 20V, I
C2
CES
= I
C
C2
MIN TYP MAX
1600
155
90
140
60
12
14
55
190
140
18
30
300
25
0.5.
1.2
1.7
18
30
260
20
1.3
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 144µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
4
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5972 Rev - 6-2000
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX
1.14
40
UNIT
°C/W
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