Advanced Power Technology APT APT30GT60AR Datasheet

APT30GT60AR

600V 40A

Thunderbolt IGBT



The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 150KHz

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

• Hermetic Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V
V

I
I

I

CM

I
E

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage

EC

Gate-Emitter Voltage

GE

Continuous Collector Current @ T

C1

Continuous Collector Current @ T

C2

Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R

LM

Single Pulse Avalanche Energy

AS

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KW)

GE

= 25°C

C

= 90°C

C

1

@ TC = 25°C

2

= 11W TC = 125°C

g

APT30GT60AR

TO-3

(TO-204AE)

G

600
600

15

±20

40
30
80
60
65

160

-55 to 150
300

C

E

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

PRELIMINARY

Symbol

BV

RBV

VGE(TH)

V

CE

I

CES

I

GES

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Collector-Emitter Reverse Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (V

(ON)

Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGE, IC = 700µA, Tj = 25°C)

CE

= 15V, IC = IC2, Tj = 25°C)

GE

= 15V, IC = IC2, Tj = 150°C)

GE

= V

CE

CES

= V

CE

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 0.5mA, Tj = -55°C)

GE

= 0V, IC = 50mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 150°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

600

-15
345

1.6 2.0 2.5

2.8
40

1000
±100

UNIT

Volts

µA

nA

050-5971 Rev - 5-2000

DYNAMIC CHARACTERISTICS APT30GT60AR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

PRELIMINARY

Total Switching Losses
Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG = 10W

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

GE

I

C

R

G

T

= +150°C

J

= 15V

= I

C2

= 10W

CES

Inductive Switching (25°C)

(Peak) = 0.66V

V

CLAMP

V

CE

V

= 15V

GE

I

= I

C

R

= 10W

G

T

= +25°C

J

= 20V, I

C2

CES

= I

C

C2

MIN TYP MAX

1600

155

90

140

60
12
14

55
190
140

18

30
300

25

0.5

1.2

1.7
18
30

260

20

1.3

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

IC = IC2, RGE = 25W, L = 144µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-5971 Rev - 5-2000

Characteristic

Junction to Case

QJC

Junction to Ambient

QJA

MIN TYP MAX

0.78
40

UNIT

°C/W