Advanced Power Technology APT APT20M42HVR Datasheet
APT20M42HVR
200V 50A 0.042W
POWER MOS V
®
TO-258
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Hermetic TO-258 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
1
= 25°C
C
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
1
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
(Repetitive and Non-Repetitive)
1
4
®
D
G
S
APT20M42HVR
200
UNIT
Volts
50
200
Amps
±30
±40
Volts
250
2.0
-55 to 150
Watts
W/°C
°C
300
45
Amps
30
1300
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33)5 5647 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
MIN TYP MAX
200
50
24
0.042
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5807 Rev C 10-2000
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT20M42HVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
@ 25°C
= 15V
@ 25°C
= 1.6W
DSS
DSS
MIN TYP MAX
5100 6120
1145 1600
390 585
148 225
47 75
75 110
14 28
21 42
48 75
10 20
MIN TYP MAX
50
200
1.5
160
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5807 Rev C 10-2000
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
qJA
0.5
D=0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.001
-5
10
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
3
See MIL-STD-750 Method 3471
4
Starting T
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
+25°C, L = 1.04mH, R
j
=
10
MIN TYP MAX
0.50
UNIT
°C/W
40
25W, Peak IL = 50A
G
=
-1
1.0 10
Loading...