Advanced Power Technology APT APT20M40BVR Datasheet
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, ID = 250µA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (VDS = V
DSS
, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, V
DS
= 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
050-5620 Rev A
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
200
59
0.040
25
250
±100
24
APT20M40BVR
200
59
236
±30
±40
300
2.4
-55 to 150
300
56
30
1300
APT20M40BVR
200V 59A 0.040Ω
G
D
S
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-247 Package
POWER MOS V
®
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761
APT Website - http://www.advancedpower.com
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
VDS = 25V
f = 1 MHz
V
GS
= 10V
VDD = 0.5 V
DSS
ID = I
D[Cont.]
@ 25°C
VGS = 15V
VDD = 0.5 V
DSS
ID = I
D[Cont.]
@ 25°C
RG = 1.6Ω
MIN TYP MAX
4050 4860
980 1375
300 450
130 195
30 45
55 80
12 24
14 28
43 70
714
UNIT
pF
nC
ns
APT20M40BVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5620 Rev A
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -I
D[Cont.]
)
Reverse Recovery Time (IS = -I
D[Cont.]
, dlS/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dlS/dt = 100A/µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN TYP MAX
59
236
1.3
280
3.5
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25°C, L = 0.75mH, R
G
=
25Ω, Peak IL = 59A
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN TYP MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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