Advanced Power Technology APT APT20M16LFLL, APT20M16B2FLL Datasheet

APT20M16B2FLL

APT20M16LFLL

200V 100A 0.016W

POWER MOS 7

TM

FREDFET

B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

T-MAX™

TO-264

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

D

LFLL

• Lower Miller Capacitance •Easier To Drive

= 25°C

4

T-MAX™ or TO-264 Package

G

APT20M16

-55 to 150

200
100
400
±30
±40
690

5.52

300
100

50

3000

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

• Lower Gate Charge, Qg • Popular

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

STATIC ELECTRICAL CHARACTERISTICS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1 5

1

(Repetitive and Non-Repetitive)

ADVANCE TECHNICAL

C

= 25°C

C

1

INFORMATION

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

200
100

35

0.016
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7044 Rev A 8-2001

DYNAMIC CHARACTERISTICS

Symbol

C

C

C

Q
Q
Q

td(on)

t

td(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time
Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 15V

DSS

DSS

APT20M16 B2FLL - LFLL

MIN TYP MAX

7020
2380

180
174

53
96
14
24
29

7

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

ADVANCE TECHNICAL

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

6

INFORMATION

T

= 25°C 230

j

T

= 125°C 450

j

T

= 25°C 0.9

j

T

= 125°C 3.4

j

T

= 25°C 11

j

T

= 125°C 20

j

THERMAL CHARACTERISTICS

Symbol

R

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471 device itself. I

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

4

Starting T

5

The maximum current is limited by lead temperature

6dv

/

dt

+25°C, L = .6mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

T-MAXTM (B2) Package Outline TO-264 (L) Package Outline

Drain

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

Drain

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

D[Cont.

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

MIN TYP MAX

MIN TYP MA X

25W, Peak IL = 100A

G

=

di

/

£ 700A/µs V

dt

]

19.51 (.768)

20.50 (.807)

R

100
400

1.3
8

0.18
40

£ V

DSS

3.10 (.122)

3.48 (.137)

T

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

£ 150°C

J

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7044 Rev A 8-2001

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

2.79 (.110)

3.18 (.125)

2-Plcs.

2.29 (.090)

2.69 (.106)

Gate
Drain
Source