Advanced Power Technology APT APT20M11JVFR Datasheet

APT20M11JVFR

SOT-227

G

S

S

D

ISOTOP

®

FREDFET

G

D

S

200V 175A 0.011Ω

POWER MOS V

®

FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

• Faster Switching

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

= 25°C

C

(Repetitive and Non-Repetitive)

1

4

APT20M11JVFR

200
175
700

±30
±40

700

5.6

-55 to 150
300
175

50

3600

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGS, ID = 5mA)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= V

DS

= 0.8 V

DS

= ±30V, V

GS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

200
175

0.011
250

UNIT

Volts

Amps
Ohms

µA

1000
±100

24

nA

Volts

050-5603 Rev B

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

V

GS

V

= 0.5 V

DD

ID = I

[Cont.] @ 25°C

D

V

GS

= 0.5 V

V

DD

ID = I

[Cont.] @ 25°C

D

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 25V

= 10V

= 15V

= 0.6Ω

DSS

DSS

APT20M11JVFR

MIN TYP MAX

18000 21600

4100 5740
1350 2025

690 1035

95 140

290 435

20 40
40 80
75 115
10 20

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery

/

dt

(Body Diode)

2

dv

/

dt

Reverse Recovery Time

rr

(I

= -ID [Cont.], di/dt = 100A/µs)

S

Reverse Recovery Charge

rr

(I

= -ID [Cont.], di/dt = 100A/µs)

S

Peak Recovery Current
(I

= -ID [Cont.], di/dt = 100A/µs)

S

(VGS = 0V, IS = -ID [Cont.])

5

T

= 25°C 150 250

j

T

= 125°C 250 500

j

T

= 25°C 0.9

j

T

= 125°C 2.5

j

T

= 25°C 12

j

T

= 125°C 20

j

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting Tj = +25°C, L = 235µH, RG = 25Ω, Peak IL = 175A

5

IS ≤ -ID [Cont.],
VR = 200V

0.2

0.1

D=0.5

di

/

dt

MIN TYP MAX

MIN TYP MAX

2500

= 100A/µs, V

DD

175
700

1.3

0.18
40

13

≤ V

, Tj ≤ 150°C, RG = 2.0Ω,

DSS

UNIT

Amps

Volts

5

V/ns

ns

µC

Amps

UNIT

°C/W

Volts

lb•in

050-5603 Rev B

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

0.0005

-5

10

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10