Advanced Power Technology APT APT20GT60BR Datasheet

APT20GT60BR
APT20GT60BR
600V 40A
Thunderbolt IGBT
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
G
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current RBSOA Clamped Inductive Load Current @ R Single Pulse Avalanche Energy Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20KW)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
2
= 11W TC = 125°C
g
APT20GT60BR
TO-247
C
E
G
600 600
15
±20
40 20 80 40 40
175
-55 to 150 300
C
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV RBV VGE(TH)
V
CE
I
CES
I
GES
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33)556 479761
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 500µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.5mA)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
600
-15 345
1.6 2.0 2.5
2.8 40
1000 ±100
UNIT
Volts
µA
nA
052-6210 RevC 3-2001
DYNAMIC CHARACTERISTICS
APT20GT60BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
RG = 10W
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
J
= 15V
GE
I
= I
C
C2
= 10W
G
= +150°C
CES
Inductive Switching (25°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
= 20V, I
V
CE
= 15V
GE
I
= I
C
= 10W
G
= +25°C
J
C2
CES
= I
C
C2
MIN TYP MAX
1045 1200
110 160
65 110 91 140
5.9 10 40 60
9.0 20 27 50
112 170 162 320
13 26 15 30
170 260 110 220 235 470 595 1190 830 1660
12 20 16 30
129 190
45 90
575 1150
4
UNIT
pF
nC
ns
ns
uJ
ns
uJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25W, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6210 RevC 3-2001
Characteristic
Junction to Case Junction to Ambient
Package Weight
T
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw)
MIN TYP MAX
0.72 40
0.22
6.1 10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m
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