Advanced Power Technology APT APT20GF120KR Datasheet

APT20GF120KR
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
1200V 32A
TO-220
G
C
E
C
• Avalanche Rated • RBSOA and SCSOA Rated
G
E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V V
I
C1
I
C2
I
CM1
I
CM2
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Emitter-Collector Voltage
EC
Gate-Emitter Voltage
GE
Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20K)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
1
@ TC = 90°C
2
APT20GF120KR
1200 1200
15
±20
32 20 64 40 22
200
-55 to 150 300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
RBV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 350µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.8mA)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
1200
-15
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
UNIT
Volts
mA
nA
052-6205 Rev C
DYNAMIC CHARACTERISTICS APT20GF120KR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
PRELIMINARY
Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.50V
CC
I
CES
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.8V
CC
CES
I
= I
C
C2
RG = 10
Inductive Switching (150°C)
V
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
R
T
J
(Peak) = 0.66V
CLAMP
V
R
T
= 20V, I
V
CE
= 15V
GE
I
= I
C
C2
= 10
G
= +150°C
= 15V
GE
I
= I
C
C2
= 10
G
= +25°C
J
C
= 15A
CES
°C)
CES
MIN TYP MAX
1100 1500
110 165
70 105 95 150 13 20
55 85 17 75 95
170
20 30 35 70
175 260
90 135
1.2
1.3
2.5 20 35
150
90
2.3 12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = 15A, VCC = 50V, RGE = 25, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6205 Rev C
Characteristic
Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX
0.63 80
10
UNIT
°C/W
lb•in
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