Advanced Power Technology APT APT20GF120BR Datasheet
APT20GF120BR
APT20GF120BR
1200V 32A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
TO-247
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
G
C
E
C
G
E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
I
C1
I
C2
I
CM
I
LM
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
GE
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20KW)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
2
= 11W TC = 125°C
g
APT20GF120BR
1200
1200
±20
32
20
64
40
22
200
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 557 9215 15 FAX: (33 ) 5 56 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 350µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.8mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
UNIT
Volts
mA
nA
052-6214 Rev B 11-2000
DYNAMIC CHARACTERISTICS
APT20GF120BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
= 0V
GE
= 25V
V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
RG = 10W
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
= 15V
GE
I
= I
C
= 10W
G
= +150°C
J
CES
C2
Inductive Switching (25°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
= 20V, I
V
CE
= 15V
GE
I
= I
C
= 10W
G
= +25°C
J
C2
CES
= I
C
C2
MIN TYP MAX
1050 1210
100 150
63 110
95 140
13 20
62 90
15 30
67 130
92 140
93 190
17 34
30 60
105 160
71 140
1.3 3.0
1.5 3.0
2.7 5.0
17 30
35 70
93 140
70 140
2.4 5.0
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 110µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6214 Rev B 11-2000
Characteristic
Junction to Case
Junction to Ambient
Package Weight
T
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw)
MIN TYP MAX
0.63
40
0.22
6.1
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m
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