Advanced Power Technology APT APT1201R4SLL, APT1201R4BLL Datasheet

ADVANCE TECHNICAL

INFORMATION

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, ID = 250µA)

On State Drain Current

2

(V

DS

> I

D(on)

x R

DS(on)

Max, VGS = 10V)

Drain-Source On-State Resistance

2

(VGS = 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (VDS = V

DSS

, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, V

DS

= 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1mA)

050-7108 Rev - 11-2001

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps
Ohms

µA

nA

Volts

MIN TYP MAX

1200

9

1.40
100
500

±100

35

APT1201R4

1200

9

36
±30
±40
300

2.4

-55 to 150
300

12
30

1210

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

TO-247

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

D3PAK

BLL

SLL

APT1201R4BLL

APT1201R4SLL

1200V 9A 1.400W

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7

TM

by significantly lowering R

DS(ON)

and Qg. Power MOS 7

TM

combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

POWER MOS 7

TM

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

3

PAK Package

DYNAMIC CHARACTERISTICS APT1201R4 BLL - SLL

050-7108 Rev - 11-2001

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

TO-247 Package Outline

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC
{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)
and Leads
are Plated

3.81 (.150)

4.06 (.160)
(Base of Lead)

Drain

(Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

Revised
8/29/97

1.04 (.041)

1.15 (.045)

13.79 (.543)

13.99 (.551)

Revised
4/18/95

D3PAK Package Outline

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

ADVANCE TECHNICAL

INFORMATION

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

VDS = 25V

f = 1 MHz

V

GS

= 10V

VDD = 0.5 V

DSS

ID = I

D[Cont.]

@ 25°C

VGS = 15V

VDD = 0.5 V

DSS

ID = I

D[Cont.]

@ 25°C

RG = 1.6W

MIN TYP MAX

2300

320
241

81
10
48
14

9
44
23

UNIT

pF

nC

ns

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -I

D[Cont.]

)

Reverse Recovery Time (IS = -I

D[Cont.]

, dlS/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dlS/dt = 100A/µs)

Peak Diode Recovery

dv

/

dt

5

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

V/ns

MIN TY P MAX

9

36

1.3

500

7.0
10

1

Repetitive Rating: Pulse width limited by maximum junction

3

See MIL-STD-750 Method 3471

temperature.

4

Starting T

j

=

+25°C, L = 29.9mH, R

G

=

25W, Peak IL = 9A

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

5dv

/

dt

numbers reflect the limitations of the test circuit rather than the

device itself. I

S

£ -I

D[Cont.

]

di

/

dt

£ 700A/µs V

R

£ V

DSS

T

J

£ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

MIN TYP MAX

0.42
40

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt