Advanced Power Technology APT APT10M09LVFR, APT10M09B2VFR Datasheet

APT10M09B2VFR

APT10M09LVFR

100V 100A 0.009W

POWER MOS V

®

FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement

B2VFR

T-MAX™

TO-264

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

LVFR

• Identical Specifications: T-MAX™ or TO-264 Package

• Lower Leakage • Faster Switching

• Fast Recovery Body Diode • 100% Avalanche Tested

G

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1 5

1 5

= 25°C

C

= 25°C

C

(Repetitive and Non-Repetitive)

1

4

INFORMATION

5

APT10M09

100
100
400
±30
±40
625

5.0

-55 to 150
300
100

50

3000

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2 5

(V

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

DS

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

x R

DS(on)

, VGS = 0V)

DSS

DSS

DS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C)
= 0V)

MIN TYP MAX

100
100

24

0.009
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5905 rev- 11-99

DYNAMIC CHARACTERISTICS APT10M09 B2VFR - LVFR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 25V

f = 1 MHz

VGS = 10V

V

= 0.5 V

DD

ID = I

[Cont.] @ 25°C

D

V

= 15V

GS

= 0.5 V

V

DD

ID = I

[Cont.] @ 25°C

D

= 0.6W

R

G

DSS

DSS

MIN TYP MAX

10030

3730
1370

340
109
131

18
36
51

9

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

ADVANCED TECHNICAL

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

6

INFORMATION

T

= 25°C 190

j

T

= 125°C 370

j

T

= 25°C 0.4

j

T

= 125°C 1.7

j

T

= 25°C 9

j

T

= 125°C 15

j

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum T

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

4

j

Starting T

5

The maximum current is limited by lead temperature.

6

IS £ -ID [Cont.],

+25°C, L = 600µH, R

j

=

di

/

= 100A/µs, V

dt

MIN TYP MAX

100
400

1.3
5

MIN TYP MAX

0.20
40

25W, Peak IL = 100A

G

=

R

=

50V, T

150°C, R

j

£

= 2.0W

G

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

TO-264 (L) Package OutlineT-MAX™ (B2) Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

Collector

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5905 rev- 11-99

(.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

4.50

2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Collector
Emitter

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Collector

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Collector
Emitter