Datasheet APT100GF60LR, APT100GF60B2R Datasheet (Advanced Power Technology APT)

APT100GF60B2R

G

C

E

APT100GF60LR

600V 100A

APT100GF60B2R

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using

T-Max

(B2R)

™

TO-264

(LR)

Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

C

E

G

C

APT100GF60LR

E

G

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V
V

I

C1

I

C2

I

CM1

I

CM2

E

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage

EC

Gate-Emitter Voltage

GE

Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Single Pulse Avalanche Energy

AS

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

5

@ TC = 25°C

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

2

APT100GF60B2R/LR

600
600

15
±20
100
100
280
200

85
390

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

RBV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Collector-Emitter Reverse Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 1.0mA)

GE

= 0V, IC = 50mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

600

-15

4.5 5.5 6.5

2.2 2.7

2.8 3.4

1.0

TBD

±100

UNIT

Volts

mA

nA

052-6217 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT100GF60B2R/LR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Turn-on Switching Energy
Turn-off Switching Energy

Total Switching Losses
Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.80V

CC

I

CES

= I

C

C2

RG = 10Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +25°C

J

V

= 20V, I

CE

CES

°C)

CES

= I

C

C2

MIN TYP MAX

4400 6000

480 675
300 450

126

20
75

50
200
190
270

50
170
400

95

6.3

5.2

11.5

5.5
180
360

90

10.5

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.5The maximum current is limited by lead temperature.

2

IC = IC2, VCC = 50V, RGE = 25Ω, L = 17µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

4

The maximum current is limited by lead temperature.

052-6217 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

0.42

0.90
40

0.22

6.1
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m

APT100GF60B2R/LR

Collector

052-6217 Rev A

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

2.21 (.087)

2.59 (.102)

4.50

(.177) Max.

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

PRELIMINARY

PRELIMINARY

TO-264 Package OutlineT-MAX™ Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Collector
Emitter

Collector

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Collector
Emitter