Advanced Power Technology APT APT100GF60LR, APT100GF60B2R Datasheet

APT100GF60B2R

G

C

E

APT100GF60LR

600V 100A

APT100GF60B2R

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using

T-Max

(B2R)

™

TO-264

(LR)

Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

C

E

G

C

APT100GF60LR

E

G

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V
V

I

C1

I

C2

I

CM1

I

CM2

E

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage

EC

Gate-Emitter Voltage

GE

Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Single Pulse Avalanche Energy

AS

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

5

@ TC = 25°C

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

2

APT100GF60B2R/LR

600
600

15
±20
100
100
280
200

85
390

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

RBV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Collector-Emitter Reverse Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 1.0mA)

GE

= 0V, IC = 50mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

600

-15

4.5 5.5 6.5

2.2 2.7

2.8 3.4

1.0

TBD

±100

UNIT

Volts

mA

nA

052-6217 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT100GF60B2R/LR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Turn-on Switching Energy
Turn-off Switching Energy

Total Switching Losses
Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.80V

CC

I

CES

= I

C

C2

RG = 10Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +25°C

J

V

= 20V, I

CE

CES

°C)

CES

= I

C

C2

MIN TYP MAX

4400 6000

480 675
300 450

126

20
75

50
200
190
270

50
170
400

95

6.3

5.2

11.5

5.5
180
360

90

10.5

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.5The maximum current is limited by lead temperature.

2

IC = IC2, VCC = 50V, RGE = 25Ω, L = 17µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

4

The maximum current is limited by lead temperature.

052-6217 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

0.42

0.90
40

0.22

6.1
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m