Advanced Power Technology APT APT10090SFLL, APT10090BFLL Datasheet

APT10090BFLL

APT10090SFLL

1000V 12A 0.900W

POWER MOS 7

TM

FREDFET

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

along with exceptionally fast switching speeds inherent with APT's

BFLL

D3PAK

TO-247

SFLL

patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

3

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR
AS

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

PAK Package

G

APT10090

1000

12

48
±30
±40
300

2.4

-55 to 150
300

12
30

1210

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

12

35

0.90
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7041 Rev A 8-2001

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

GS

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

= 15V

DSS

DSS

APT10090 BFLL - SFLL

MIN TYP MAX

2040

338

67
78
12
52
10

5

26

8

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

ADVANCE TECHNICAL

1

(Body Diode)

2

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

dt

INFORMATION

T

= 25°C 200

j

T

= 125°C 350

j

T

= 25°C 0.7

j

T

= 125°C 2.0

j

T

= 25°C 10

j

T

= 125°C 15

j

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 16.8mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

MIN TYP MAX

MIN TYP MAX

G

di

/

£ 700A/µs V

D[Cont.

dt

]

12
48

1.3
18

0.42
40

25W, Peak IL = 12A

=

£ V

R

DSS

T

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

£ 150°C

J

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

Drain

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7041 Rev A 8-2001

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Dimensions in Millimeters and (Inches)

5.45 (.215) BSC
2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Drain

(Heat Sink)

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

{3 Plcs}

1.22 (.048)

1.32 (.052)

15.95 (.628)

16.05 (.632)

Dimensions in Millimeters (Inches)

Revised

4/18/95

13.79 (.543)

13.99 (.551)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC
{2 Plcs.}

Source

Drain

Gate

1.04 (.041)

1.15 (.045)

1.27 (.050)

1.40 (.055)

13.41 (.528)

13.51 (.532)

Revised
8/29/97

3.81 (.150)

4.06 (.160)
(Base of Lead)

Heat Sink (Drain)
and Leads
are Plated

11.51 (.453)

11.61 (.457)