Advanced Power Technology APT APT1004R2KN, APT1004RKN Datasheet
D
TO-220
G
APT1004RKN 1000V 3.6A 4.00Ω
S
APT1004R2KN 1000V 3.5A 4.20Ω
POWER MOS IV
®
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
V
TJ,T
Drain-Source Voltage
DSS
Continuous Drain Current
I
D
I
Pulsed Drain Current
DM
V
Gate-Source Voltage
GS
P
Total Power Dissipation @ T
D
Operating and Storage Junction Temperature Range
STG
1
= 25°C, Derate Above 25°C
C
STATIC ELECTRICAL CHARACTERISTICS
BV
I
I
ID(ON)
V
GS
R
DS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
DSS
Zero Gate Voltage Drain Current (V
DSS
GSS
(TH)
(ON)
= 0.8 V
(V
DS
Gate-Source Leakage Current (V
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Gate Threshold Voltage (V
Static Drain-Source On-State Resistance
(VGS = 10V, ID = 0.5 ID [Cont.])
, VGS = 0V, TC = 125°C)
DSS
2
DS
DS
= ±30V, V
GS
= VGS, ID = 1.0mA)
= V
, VGS = 0V)
DSS
DS
2
= 0V)
All Ratings: TC = 25°C unless otherwise specified.
APT1004R2KN APT1004RKN UNIT
1000 1000 Volts
3.5 3.6 Amps
14.0 14.4 Amps
±30 Volts
125 Watts
-55 to 150 °C
TYPMIN MAX UNITSymbol Characteristic / Test Conditions / Part Number
APT1004RKN 1000 Volts
APT1004R2KN
1000 Volts
250
µA
nA
APT1004RKN
APT1004R2KN
1000
±100
3.6 Amps
3.5 Amps
24Volts
APT1004RKN
APT1004R2KN
4.00 Ohms
4.20 Ohms
THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP UNITMAX
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 556479761
Junction to Case
θJC
Junction to Ambient
θJA
T
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1.00 °C/W
80 °C/W
300 °C
050-0036 Rev C
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT1004R/1004R2KN
Test Conditions TYP
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
ID = ID [Cont.], VGS = 15V
VGS = 0V
= 25V
V
DS
f = 1 MHz
= 10V, ID = ID [Cont.]
GS
= 0.5 V
V
DD
VDD = 0.5 V
R
= 1.8Ω
G
DSS
DSS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number UNITMAXTYPMIN
APT1004RKN 3.6 Amps
APT1004R2KN 3.5 Amps
APT1004RKN 14.4 Amps
APT1004R2KN 14.0 Amps
150 290 580 ns
0.8 1.65 3.3 µC
V
I
Continuous Source Current (Body Diode)
S
I
Pulsed Source Current
SM
Diode Forward Voltage
SD
t
Reverse Recovery Time (I
rr
Q
Reverse Recovery Charge
rr
1
(Body Diode)
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
UNITMAXMINSymbol Characteristic
805 950 pF
115 160 pF
37 60 pF
35 55 nC
4.3 6.5 nC
18 27 nC
10 20 ns
918ns
32 48 ns
23 46 ns
1.3 Volts
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part NumberSymbol Characteristic MIN TYP MAX UNIT
= 0.4 V
SOA1
SOA2
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Safe Operating Area
Safe Operating Area
I
Inductive Current Clamped
LM
1.0
D=0.5
0.05
0.02
0.01
, THERMAL IMPEDANCE (°C/W)
θJC
Z
0.5
0.1
0.05
0.01
0.2
0.1
SINGLE PULSE
V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT1004RKN
APT1004R2KN
125
125 Watts
14.4 Amps
14.0 Amps
Watts
050-0036 Rev C
0.004
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
-1
10
1.0 10
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