Advanced Power Technology APT APT1004RGN Datasheet

G

D

TO-257

S

TM

APT1004RGN 1000V 3.3A 4.00Ω

POWER MOS IV

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage
Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

APT1004RGN

1000

3.3

13.2
±30
100

0.8

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV
ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

(ON)

Drain-Source On-State Resistance

2

(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 0.5 ID [Cont.])

= 0.8 V

DS

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

LM

Characteristic

Safe Operating Area
Safe Operating Area
Inductive Current Clamped

= 0.4 V

V

DS

DSS

IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

Test Conditions

, IDS = PD / 0.4 V

, t = 1 Sec.

DSS

MIN TYP MAX

1000

3.3

4.00
250

1000
±100

2 4

MIN TYP MAX

100
100

3.3

UNIT

Volts
Amps
Ohms

µA

nA

Volts

UNIT

Watts

Amps

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

APT Website - http://www.advancedpower.com

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-0019 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT1004RGN

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

f = 1 MHz

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

SD

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

(Body Diode)

GS

= 0V

DSS

DSS

MIN TYP MAX

812
805 950
115 160

37 60
35 55

4.3 7
18 27
10 20
12 24
33 50
16 32

MIN TYP MAX

3.3

13.2

1.3

290 580

1.65 3.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-0019 Rev B

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

1.5

1.0

0.5

0.1

0.05

0.01

, THERMAL IMPEDANCE (°C/W)

0.005

JC

θ

Z

0.001

-5

10

D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

MIN TYP MAX

1.0 10

UNIT

1.20

W/°C

80