Datasheet APT1004RBN, APT1004R2BN Datasheet (Advanced Power Technology APT)

D

G

S

TO-247

APT1004RBN 1000V 4.4A 4.00Ω
APT1004R2BN 1000V 4.0A 4.20Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

1004RBN 1004R2BN

1000 1000

= 25°C

C

1

4.4 4.0

17.6 16
±30

= 25°C

C

180

1.44

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT1004RBN

1000

APT1004R2BN 1000
APT1004RBN 4.4
APT1004R2BN 4.0
APT1004RBN 4.00
APT1004R2BN 4.20

250
1000
±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.68

°C/W

40

050-0011 Rev C

DYNAMIC CHARACTERISTICS

APT1004R/1004R2BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

805 950
115 160

37 60

= 10V

DSS

35 55

4.3 6.5
18 27

= 15V

DSS

12 24
10 20
33 50
14 27

MIN TYP MAX

APT1004RBN
APT1004R2BN 4.0
APT1004RBN 17.6
APT1004R2BN 16

290 580

1.65 3.3

4.4

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-0011 Rev C

Characteristic

Safe Operating Area
Safe Operating Area

Inductive Current Clamped

LM

1.0

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.5

0.1

0.05

0.01

0.005

0.001
10

D=0.5

0.2

0.1

0.05

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT1004RBN 17.6
APT1004R2BN 16

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

MIN TYP MAX

180
180

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT1004R/1004R2BN

5

V =5.5V,6V &10V

GS

4

5V

5

V =10V

GS

5.5V

6V

4

5V

3

2

1

, DRAIN CURRENT (AMPERES)

D

0

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V

4V

200 300 400 5001000

3

2

1

, DRAIN CURRENT (AMPERES)

D

0

4

0

8121620

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

10

8

V > I (ON) x R (ON)MAX.

DS D DS

230µ SEC. PULSE TEST

T =-55°C

J

T =+25°C

J

T =+125°C

J

6

4

2

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

T =+125°C

J

T =+25°C

0

J

02468

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

T =-55°C

J

5

2.5

2.0

1.5

TJ = 25°C

2µ SEC. PULSE TEST

NORMALIZED TO
= 10V @ 0.5 ID [Cont.]

V

GS

V =10V

GS

1.0

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

0

246

(ON) vs DRAIN CURRENT

DS

8

1.2

4.5V

4V

V =20V

GS

10 12

4

3

APT1004R2BN

APT1004RRBN

2

1

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

R

-25 0 25 50 75 100 125 150-50
T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

1.1

1.0

0.9

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

-25 0 25 50 75 100 125 150-50

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

-50 -25 0 25 50 75 100 125 150

050-0011 Rev C

60

10,000

APT1004R/1004R2BN

APT1004RBN
APT1004R2BN

OPERATION HERE

10

LIMITED BY R (ON)

APT1004RBN
APT1004R2BN

DS

1

T =+25°C

C

T =+150°C

, DRAIN CURRENT (AMPERES)

D

.1

J

SINGLE PULSE

1 5 10 50 100 1000

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10µS

100µS

1mS

10mS
100mS

DC

APT1004R/1004R2BN

1,000

100

C

iss

C

oss

C

rss

10

10 30

5004020

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

V =100V

DS

V =200V

DS

V =500V

DS

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

10

0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

30 40 50 0 .5 1.0 1.5 2.0

20

100

50

20

T =+150°C

10

J

5

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T =+25°C

J

050-0011 Rev C

Drain

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

TO-247AD Package Outline

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source