Advanced Power Technology APT APT10026L2FL Datasheet
ADVANCE TECHNICAL
INFORMATION
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, ID = 250µA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (VDS = V
DSS
, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, V
DS
= 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
050-7112 Rev- 9-2001
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
1000
38
0.260
250
1000
±100
35
APT10026L2FLL
1000
38
152
±30
±40
890
7.12
-55 to 150
300
38
50
3200
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: (33) 5 56 47 97 61
G
D
S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Qg. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance •Increased Power Dissipation
• Lower Miller Capacitance •Easier To Drive
• Lower Gate Charge, Qg • Popular TO-264
MAX Package
TO-264
Max
APT10026L2FLL
1000V 38A 0.260W
POWER MOS 7
TM
FREDFET
DYNAMIC CHARACTERISTICS
050-7112 Rev- 9-2001
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
TO-264 MAXTM(L2) Package Outline
APT10026L2FLL
ADVANCE TECHNICAL
INFORMATION
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/
dt
5
Reverse Recovery Time
(I
S
= -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 V
DSS
ID = I
D
[Cont.] @ 25°C
V
GS
= 15V
VDD = 0.5 V
DSS
ID = I
D
[Cont.] @ 25°C
RG =0.6W
MIN TYP MAX
7680
1270
252
294
45
196
17
8
39
9
UNIT
pF
nC
ns
MIN TYP MAX
38
152
1.3
18
T
j
= 25°C 310
T
j
= 125°C 625
T
j
= 25°C 2.0
T
j
= 125°C 6.0
T
j
= 25°C 15
T
j
= 125°C 2.6
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
MIN TYP MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25°C, L = 4.43mH, R
G
=
25W, Peak IL = 38A
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself. I
S
£ -I
D[Cont.
]
di
/
dt
£ 700A/µs V
R
£ V
DSS
T
J
£ 150°C
APT Reserves the right to change,
without notice, the specifications
and information contained herein.
Loading...