D
S
S
G
G
S
ISOTOP
POWER MOS IV
D
SOT-227
®
APL501J 500V 43.0A 0.12W
"UL Recognized" File No. E145592 (S)
®
SINGLE DIE ISOTOP® PACKAGE
N-CH AN NEL ENHANCEMENT MODE HI GH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
IDM, l
LM
V
GS
P
D
TJ,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
APL501J
500
43
172
±30
520
4.16
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
ID(ON)
(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
(V
> ID(ON) x RDS(ON) Max, VGS = 8V)
DS
= 0V, ID = 250 µA)
GS
2
(VGS = 10V, 0.5 ID [Cont.])
, VGS = 0V)
DSS
= 0.8 V
DS
= ±30V, V
GS
DSS
DS
, VGS = 0V, TC = 125°C)
= 0V)
MIN TYP MAX
500
43
24
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QCS
Characteristic
Junction to Case
Case to Sink
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.06
0.12
25
250
±100
0.24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
UNIT
°C/W
APT Website - http://www.advancedpower.com
USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
050-5903 Rev C 9-2001
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APL501J
Symbol
C
iss
C
oss
C
rss
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 0.5 V
DSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
MIN TYP MAX
6040 7300
1220 1710
510 770
13 26
20 40
54 81
11 20
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
Characteristic
Safe Operating Area
V
Test Conditions / Part Number
= 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
DS
MIN TYP MAX
325
UNIT
pF
ns
UNIT
Watts
0.3
D=0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.001
10
80
60
40
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
VGS=9V, 10V, 12V, 14 & 16V
-4
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
8 V
7 V
-2
10
10
80
VGS=10, 12, 14 & 16V
60
40
-1
1.0 10
9 V
8 V
7 V
050-5903 Rev C 9-2001
20
, DRAIN CURRENT (AMPERES)
D
I
0
020406080100 0 4 8 12 16
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
6 V
5 V
20
, DRAIN CURRENT (AMPERES)
D
I
0
6 V
5 V
APL501J
40
30
VDS> ID (ON) x RDS (ON)MAX.
20
10
, DRAIN CURRENT (AMPERES)
D
0
02468 020406080
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
TJ = -55°C
TJ = +25°C
TJ = +125°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C TJ = -55°C
1.30
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
1.20
VGS=10V
1.10
1.00
0.90
(ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
0.80
VGS=20V
1.15
40
1.10
1.05
30
1.00
20
0.95
10
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
T
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
0.90
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.85
1.2
1.1
1.0
1.5
0.9
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
DS
0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
175
OPERATION HERE
100
LIMITED BY RDS (ON)
100µS
50
1mS
10
5
10mS
100mS
1
.5
, DRAIN CURRENT (AMPERES) R
D
I
TC =+25°C
TJ =+150°C
DC
(NORMALIZED) VOLTAGE (NORMALIZED)
0.8
(TH), THRESHOLD VOLTAGE BV
GS
0.7
0.6
30,000
10,000
5,000
1,000
500
C, CAPACITANCE (pF) V
C
iss
C
oss
C
rss
SINGLE PULSE
.1
1 5 10 50 100 500 .01 .1 1 10 50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
050-5903 Rev C 9-2001
APL501J
r = 4.0 (.157)
(2 places)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
SOT-227 (ISOTOP®) Package Outline
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
* Source Drain
* Source
Dimensions in Millimeters and (Inches)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
*
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
®
ISOTOP
is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5903 Rev C 9-2001
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
"UL Recognized" File No. E145592
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