Advanced Power Technology APT APL501J Datasheet

D

S

S

G

G

S

ISOTOP

POWER MOS IV

D

SOT-227

®

APL501J 500V 43.0A 0.12W

"UL Recognized" File No. E145592 (S)

®

SINGLE DIE ISOTOP® PACKAGE

N-CH AN NEL ENHANCEMENT MODE HI GH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

IDM, l

LM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

= 25°C

C

and Inductive Current Clamped

= 25°C

C

APL501J

500

43
172
±30
520

4.16

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

ID(ON)

(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

2

(V

> ID(ON) x RDS(ON) Max, VGS = 8V)

DS

= 0V, ID = 250 µA)

GS

2

(VGS = 10V, 0.5 ID [Cont.])

, VGS = 0V)

DSS

= 0.8 V

DS

= ±30V, V

GS

DSS

DS

, VGS = 0V, TC = 125°C)

= 0V)

MIN TYP MAX

500

43

24

THERMAL CHARACTERISTICS

Symbol

R

QJC

R

QCS

Characteristic

Junction to Case
Case to Sink

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.06

0.12
25

250

±100

0.24

UNIT

Volts
Amps
Ohms

µA

nA

Volts

UNIT

°C/W

APT Website - http://www.advancedpower.com

USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]

050-5903 Rev C 9-2001

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APL501J

Symbol

C

iss

C

oss

C

rss

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

DSS

ID = ID [Cont.] @ 25°C

RG = 0.6W

MIN TYP MAX

6040 7300
1220 1710

510 770

13 26
20 40
54 81
11 20

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

Characteristic

Safe Operating Area

V

Test Conditions / Part Number

= 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C

DS

MIN TYP MAX

325

UNIT

pF

ns

UNIT

Watts

0.3

D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001
10

80

60

40

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

10

VGS=9V, 10V, 12V, 14 & 16V

-4

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

8 V

7 V

-2

10

10

80

VGS=10, 12, 14 & 16V

60

40

-1

1.0 10

9 V

8 V

7 V

050-5903 Rev C 9-2001

20

, DRAIN CURRENT (AMPERES)

D

I

0

020406080100 0 4 8 12 16

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

6 V

5 V

20

, DRAIN CURRENT (AMPERES)

D

I

0

6 V

5 V