Advanced Power Technology APT APL1001P Datasheet

D

P-Pack

G

S

POWER MOS IV

®

APL1001P 1000V 18.0A 0.60W

HERMETIC PACKAGE

N-CH AN NEL ENHANCEMENT MODE HI GH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

IDM, l

LM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

= 25°C

C

and Inductive Current Clamped

= 25°C

C

APL1001P

1000

18

72
±30
520

4.16

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

ID(ON)

(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

2

(V

> ID(ON) x RDS(ON) Max, VGS = 8V)

DS

= 0V, ID = 250 µA)

GS

2

(VGS = 10V, 0.5 ID [Cont.])

, VGS = 0V)

DSS

= 0.8 V

DS

= ±30V, V

GS

DSS

DS

, VGS = 0V, TC = 125°C)

= 0V)

MIN TYP MAX

1000

18

24

THERMAL CHARACTERISTICS

Symbol

R

QJC

R

QCS

Characteristic

Junction to Case
Case to Sink

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

MIN TYP MAX

0.06

0.60
25

250

±100

0.24

UNIT

Volts
Amps
Ohms

µA

nA

Volts

UNIT

°C/W

APT Website - http://www.advancedpower.com

USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]

050-5899 Rev - 8-2001

DYNAMIC CHARACTERISTICS APL1001P

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

DSS

ID = ID [Cont.] @ 25°C

RG = 0.6W

MIN TYP MAX

6000 7200

775 1080
285 430

14 28
14 28
60 92
14 20

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

Characteristic

Safe Operating Area

V

Test Conditions / Part Number

= 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C

DS

MIN TYP MAX

325

UNIT

pF

ns

UNIT

Watts

0.3

D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001
10

40

30

20

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

VGS=6.5V, 7.0V, 8.0V,
10V & 15V

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

6.0 V

5.5 V

-2

10

-1

10

40

VGS= 15V, 10V, 8V, 7V & 6.5V

30

20

1.0 10

6.0 V

5.5 V

050-5899 Rev - 8-2001

10

, DRAIN CURRENT (AMPERES)

D

I

0

020406080100 0 4 8121620

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

5.0 V

4.5 V

10

, DRAIN CURRENT (AMPERES)

D

I

0

5.0 V

4.5 V